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Cadmium Telluride - CdTe
CdTe and mixed crystals up to 3" diameter for growing epitaxial layers of MCT for IR detectors, special windows, and solar cells. Grown using Bridgeman with Cd-reservoir.
GaSb is available in both P and N types for semiconductor industries. Standard wafers are 1.5, 2.0 and 3.0" diameter and oriented [100], [111] and [311] and off angles. GaSb single crystal wafers are grown by the LEC CZ or horizontal zone melting method and prepared for epitaxial deposition.
Gallium Arsenide - GaAs
GaAs is available up to 3" diameter and can be specially doped for use in microwaves, laser and photoelectric devices. Special single crystal substrates are available for depositing III-V compounds for blue lasers and LEDs.
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Gallium Phosphide
Germanium - GeDiameters up to 300 mm and transmission range from 1.8 um to 17 um. Grown using CZ method.
Indium Phosphide - InP
Doped and undoped material available in both P and N types up to 3" diameter.High quality InP single crystal wafers, N and P types, are grown by LEC and precision wafered before epitaxial polishing. Wafers are available doped and undoped in standard sizes of 1.5, 2.0 and 3.0". Semi insulating InP is doped with Fe and are grown by LEC for advanced microwave devices.
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Growth Method: Czochralski and float zone. Cz ingots and wafers are available up to 150 mm diameter and FZ material up to 76 mm. Both grades are available with a range of dopants and electrical properties. Call or Fax for details of materials. Smooth, regular cross section with slight variation in diameters.
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Silicon Carbide - SiC
Single crystal substrates are available with very low dislocation density. Standard stock sizes are 10 x 10 x 0.3 mm and 7 x 7 x.3mm.
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